Micron and trump administration announce expanded u.s. investments in leading-edge dram manufacturing and r&d

Micron plans to invest approximately $200 billion in semiconductor manufacturing and r&d in idaho, new york and virginia, enhancing domestic memory supply and technology leadership micron to build second leading-edge memory manufacturing fab in idaho, modernize and expand virginia fab and bring end-to-end high bandwidth memory (hbm) manufacturing capabilities to u.s. to meet anticipated ai-driven demand boise, idaho, june 12, 2025 (globe newswire) -- micron technology, inc. (nasdaq: mu) and the trump administration today announced micron's plans to expand its u.s. investments to approximately $150 billion in domestic memory manufacturing and $50 billion in r&d, creating an estimated 90,000 direct and indirect jobs. as part of today's announcement, micron plans to invest an additional $30 billion beyond prior plans which includes building a second leading-edge memory fab in boise, idaho; expanding and modernizing its existing manufacturing facility in manassas, virginia; and bringing advanced packaging capabilities to the u.s. to enable long-term growth in high bandwidth memory (hbm), which is essential to the ai market.
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