$30 million in federal funding to advance innovation and production of next-generation gan chips at globalfoundries fab in vermont

A world leader in rf semiconductor manufacturing, gf's vermont fab moves closer to large-scale production of next-generation gallium nitride chips essex junction, vt., oct. 17, 2022 /prnewswire/ -- u.s. senator patrick leahy and globalfoundries (nasdaq: gfs) (gf), a global leader in feature-rich semiconductor manufacturing, today announced the award of $30 million in federal funding to advance the development and production of next-generation gallium nitride (gan) on silicon semiconductors at gf's facility in essex junction, vermont.
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