Ii-vi incorporated unveils 200 mm semi-insulating sic substrates for rf power amplifiers in 5g antennas

Ii-vi incorporated announced that it has introduced the prototype 200 mm diameter semi-insulating silicon carbide (sic) substrates for rf power amplifiers in 5g wireless base-station antennas and other high-performance rf applications. the deployment of 5g wireless is expected to accelerate globally, driving the demand for rf power amplifiers that can operate efficiently in new high-frequency bands and be manufactured on a technology platform that can scale to meet the demand. gallium nitride-on-silicon carbide (gan-on-sic) rf power amplifiers have superior performance, compared with devices based on silicon, over a wide spectrum of 5g operating frequencies in the gigahertz range, including in the millimeter-wave bands. ii-vi’s prototype 200 mm semi-insulating sic substrates are enabling gan-on-sic rf power amplifiers, currently produced on 100 mm and 150 mm substrates, to reach the next level in manufacturing scale. ii-vi is once again advancing the in sic substrates, with a strong technology portfolio of 30 active patents using highly differentiated and proprietary manufacturing platforms and technologies including crystal growth, substrate fabrication, and polishing. the evolution of semi-insulating sic substrates to 200 mm will enable the rf power amplifier market to continue to scale, increasingly replace functions performed by devices based on silicon, and enable new applications.
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