Ii-vi incorporated signs multiyear agreement of over $100 million to supply silicon carbide substrates for rf power amplifiers in 5g wireless

Ii-vi incorporated announced that it signed a multiyear agreement of over $100 million, to supply silicon carbide (sic) substrates for gallium nitride (gan) rf power amplifiers deployed in 5g wireless base stations. the accelerating rollout of 5g wireless services is driving deeper strategic relationships in the 5g wireless supply chain ecosystem to meet the market windows. this new agreement builds on ii-vi’s extensive experience as a leading global supplier of high-quality sic substrates for the 4g and 5g markets. leveraging a strong intellectual property portfolio of 30 active patents, ii-vi is advancing the in sic substrates with highly differentiated and proprietary technologies including crystal growth, substrate fabrication, and polishing. ii-vi is also expanding its ability to drive the 5g rf semiconductor roadmap by establishing a vertically integrated, 150 mm gan-on-sic hemt device manufacturing platform. in addition to sic substrates, ii-vi provides a powerful array of wavelength management solutions and transceivers for the wireless optical access infrastructure. altogether, ii-vi offers a broad range of materials, devices, components, and subsystems to enable the coming large-scale 5g rollout.
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